Blue InGaN Light-Emitting Diodes with Dip-Shaped Quantum Wells
Abstract
InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs). © 2011 Chinese Physical Society and IOP Publishing Ltd.
Recommended Citation
T. Lu and S. Li and K. Zhang and C. Liu and G. Xiao and Y. Zhou and S. Zheng and Y. Yin and L. Wu and H. Wang and X. Yang, "Blue InGaN Light-Emitting Diodes with Dip-Shaped Quantum Wells," Chinese Physics B, Institute of Physics - IOP Publishing, Jan 2011.
The definitive version is available at https://doi.org/10.1088/1674-1056/20/10/108504
Department(s)
Mechanical and Aerospace Engineering
Keywords and Phrases
Dip-Shaped Quantum Wells; GaN-Based Light-Emitting Diodes
International Standard Serial Number (ISSN)
1674-1056
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2011 Institute of Physics - IOP Publishing, All rights reserved.
Publication Date
01 Jan 2011
