Abstract
InGaN based light-emitting diodes (LEDs) with undoped GaN interlayer of variant thicknesses grown by metal-organic chemical vapor deposition technique have been investigated. It was found that the thickness of undoped GaN interlayers affected LEDs' performance greatly. The LED with 50 nm undoped GaN interlayer showed higher light output power and lower reverse-leakage current compared with the others at 20 mA. Based on electrical and optical characteristics analysis and numerical simulation, these improvements are mainly attributed to the improvement of the quality of depletion region by inserting an undoped GaN layer, as well as reduction of the Shockley-Read-Hall recombination in InGaN/GaN MQWs.
Recommended Citation
T. Lu and S. Li and K. Zhang and C. Liu and Y. Yin and L. Wu and H. Wang and X. Yang and G. Xiao and Y. Zhou, "Effect of the Thickness of Undoped GaN Interlayers Between Multiple Quantum Wells and the P-Doped Layer on the Performance of GaN Light-Emitting Diodes," Optics Express, vol. 19, no. 19, pp. 18319 - 18323, Optical Society of America, Sep 2011.
The definitive version is available at https://doi.org/10.1364/OE.19.018319
Department(s)
Mechanical and Aerospace Engineering
International Standard Serial Number (ISSN)
1094-4087
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2011 Optical Society of America, All rights reserved.
Publication Date
06 Sep 2011
