The Advantage of Blue InGaN Multiple Quantum Wells Light-Emitting Diodes with P-AlInN Electron Blocking Layer

Author

T.-P. Lu
S.-T. Li
K. Zhang
C. Liu
G.-W. Xiao
Y.-G. Zhou
S.-W. Zheng
Y.-A. Yin
L.-J. Wu
H.-L. Wang
Xiaodong Yang, Missouri University of Science and TechnologyFollow

Abstract

InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs). © 2011 Chinese Physical Society and IOP Publishing Ltd.

Recommended Citation

T. Lu and S. Li and K. Zhang and C. Liu and G. Xiao and Y. Zhou and S. Zheng and Y. Yin and L. Wu and H. Wang and X. Yang, "The Advantage of Blue InGaN Multiple Quantum Wells Light-Emitting Diodes with P-AlInN Electron Blocking Layer," Chinese Physics B, Institute of Physics - IOP Publishing, Jan 2011.

The definitive version is available at https://doi.org/10.1088/1674-1056/20/9/098503

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

AlInN; Electron Blocking Layer; GaN-Based Light-Emitting Diodes

International Standard Serial Number (ISSN)

1674-1056

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 Institute of Physics - IOP Publishing, All rights reserved.

Publication Date

01 Jan 2011