Abstract
1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm² was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T₀) of 92 and 54 K for operating temperatures below and above 75°C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/°C.
Recommended Citation
X. Yang et al., "High-Temperature Characteristics of 1.3 µm InGaAsN:Sb/GaAs Multiple-Quantum-Well Lasers Grown by Molecular-Beam Epitaxy," Applied Physics Letters, vol. 76, no. 7, pp. 795 - 797, American Institute of Physics (AIP), Feb 2000.
The definitive version is available at https://doi.org/10.1063/1.125587
Department(s)
Mechanical and Aerospace Engineering
International Standard Serial Number (ISSN)
0003-6951
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2000 American Institute of Physics (AIP), All rights reserved.
Publication Date
14 Feb 2000
