High Performance 1.3 µm InGaAsN:Sb/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy

Author

Xiaodong Yang, Missouri University of Science and TechnologyFollow
J. B. Heroux
M. J. Jurkovic
W. I. Wang

Abstract

Room-temperature pulsed operation of 1.3 μm InGaAsN:Sb/GaAs quantum well (QW) lasers were grown by solid source molecular beam epitaxy (MBE). Sb was used as a surfactant to enhance the quality of the InGaAsN/GaAs quantum well, resulting in a record low threshold of 1.02 kA/cm². The high temperature characteristics of InGaAsN:Sb/GaAs QW lasers were improved by multiple quantum well (MQW) active layer.

Recommended Citation

X. Yang et al., "High Performance 1.3 µm InGaAsN:Sb/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy," Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, American Institute of Physics (AIP), Jan 2000.

The definitive version is available at https://doi.org/10.1116/1.591409

Department(s)

Mechanical and Aerospace Engineering

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2000 American Institute of Physics (AIP), All rights reserved.

Publication Date

01 Jan 2000