Low-Threshold 1.3-µm InGaAsN:Sb-GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy

Author

Xiaodong Yang, Missouri University of Science and TechnologyFollow
J. B. Heroux
M. J. Jurkovic
W. I. Wang

Abstract

1.3 /spl µm InGaAsN: Sb-GaAs single-quantum-well laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold of 1.02 kA/cm2 and a slope efficiency of 0.12 W/A are obtained for broad-area laser diodes under pulsed operation at room temperature. A characteristic temperature of 64 K and a lasing wavelength temperature dependence of 0.38 nm/°C are reported.

Recommended Citation

X. Yang et al., "Low-Threshold 1.3-µm InGaAsN:Sb-GaAs Single-Quantum-Well Lasers Grown by Molecular Beam Epitaxy," IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers (IEEE), Jan 2000.

The definitive version is available at https://doi.org/10.1109/68.823492

Department(s)

Mechanical and Aerospace Engineering

International Standard Serial Number (ISSN)

1041-1135

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2000 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.

Publication Date

01 Jan 2000