Electrical and Statistical Characterization of Reactively Sputtered TiOx Capacitors with Nickel Electrodes
Abstract
Thin film capacitors were sputtered on Si wafers with Ni electrodes in order to determine the dielectric properties of reactively sputtered TiOx with a base metal electrode system. The use of Ni electrodes gave electrically responsive devices with low frequency resistances of 350 to 9100 Ω, permittivities from 250 to 1500, and losses between 0.300 and 0.750. The large loss values have been attributed to the semiconductive nature of sub-stoichiometric TiOx. The decreased resistance is subsequently responsible for the elevated permittivities. Dielectric data was able to analyzed by a full factorial design of experiments analysis, and has be related to the activity of oxygen in the plasma during deposition. XPS characterization confirmed the proposed effects of oxygen both in and on the film during deposition.
Recommended Citation
J. N. Reck et al., "Electrical and Statistical Characterization of Reactively Sputtered TiOx Capacitors with Nickel Electrodes," Thin Film Techniques for the Fabrication of Nano-scale High Energy Density Capacitors, Jan 2008.
Department(s)
Materials Science and Engineering
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Publication Date
2008-01-01
