Thickness Effects on the Ac and Dc Electrical Behavior of RF-sputtered BaTiO3 nano-capacitors with Pt and Ni Electrodes

Author

• James N. Reck
• Matthew O'Keefe, Missouri University of Science and TechnologyFollow
• Fatih Dogan, Missouri University of Science and TechnologyFollow

Abstract

Nanoscale BaTiO₃ capacitors were deposited on Si wafers at dielectric thicknesses of approximately 25, 50, 100, and 200 nm using RF-magnetron sputtering with either 25 nm thick Ni or Pt electrodes. Multiple DC and AC tests were conducted on these devices to determine the effects of BaTiO₃ thickness on the measured dielectric behaviors. All films were observed to have non-linear responses for resistance, permittivity, and loss with respect to dielectric thickness. The permittivity was found to follow a standard dead layer model behavior with measured values ranging from approximately 350 to 1700 for Ni electrodes and approximately 100 to 2500 for Pt electrodes, with losses from 0.020 to 0.250 and 0.025 to 0.140 for Ni and Pt electrodes, respectively. Resistances were observed to vary from 15 to 300 GΩ with Ni and 8x10 10 to 4.7 x10 12 Ω-m with Pt, with the differences attributable to formation mechanisms of the interfacial layers between the BaTiO₃ and the metal electrodes.

Recommended Citation

J. N. Reck et al., "Thickness Effects on the Ac and Dc Electrical Behavior of RF-sputtered BaTiO3 nano-capacitors with Pt and Ni Electrodes,", Jan 2008.

Department(s)

Materials Science and Engineering

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Publication Date

2008-01-01