Analysis of RF-sputtered BaTiO3 Thin Film Capacitors with Ni Electrodes using a Statistical Design of Experiments
Abstract
Nano-scale BaTiO3 thin film capacitors with Ni electrodes were RF-magnetron sputtered onto Si wafers. A design of experiments regimen was performed to gain an understanding of the process variable interactions during deposition of Ni-BaTiO3 devices with 100 nm thick BaTiO3 and 20 nm thick Ni without any post-deposition heat treatments. RF powers between 100 and 200 W with plasmas containing between 10% and 50% O2 at deposition temperatures between 20 C and 300 C resulted in calculated permittivities from approximately 150 to 1100 with losses between 0.016 to 0.371. Resistances were> 20 MΩ with device yields averaging> 95%. Statistical models were fit to the permittivity and loss data with R 2 values of 0.99 and 0.91, respectively. Model predictions based on the design of experiments results tested at 150W and 30% O2 at 20 C showed a deviation of predicted versus actual values of 7.1% for permittivity and 19.0% for loss. Variations in the dielectric response were related to the activity of oxygen both in the plasma and in the film during sputter deposition.
Recommended Citation
J. N. Reck et al., "Analysis of RF-sputtered BaTiO3 Thin Film Capacitors with Ni Electrodes using a Statistical Design of Experiments," Thin Film Techniques for the Fabrication of Nano-scale High Energy Density Capacitors, Jan 2008.
Department(s)
Materials Science and Engineering
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Publication Date
2008-01-01
