Title

Blue InGaN Light-Emitting Diodes with Dip-Shaped Quantum Wells

Abstract

InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs). © 2011 Chinese Physical Society and IOP Publishing Ltd.

Department(s)

Mechanical and Aerospace Engineering

Keywords and Phrases

Dip-Shaped Quantum Wells; GaN-Based Light-Emitting Diodes

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2011 Institute of Physics - IOP Publishing, All rights reserved.

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