Propagation of Surface Electromagnetic Waves on N-Type GaAs in the Far Infrared
The Far Infrared (84.2 Cm-1) Propagation Distance of Surface Electromagnetic Waves on Samples of Single Crystal GaAs with Varied Carrier Concentrations Has Been Measured using the Twoprism Technique. the Experimental Propagation Distances Agree Well with Theoretical Values Obtained from Computer Calculations using the Exact Two Media Dispersion Relation. It Was Found that the Propagation of the SEW is Strongly Dependent Upon the Free Carrier Concentration of the GaAs Sample as Expected. It is Demonstrated that a Simple Classical Theory of SEW Works for GaAs-Air Interfaces in the Far Infrared. © 1979.
D. L. Begley et al., "Propagation of Surface Electromagnetic Waves on N-Type GaAs in the Far Infrared," Surface Science, vol. 81, no. 1, pp. 238 - 244, Elsevier, Feb 1979.
The definitive version is available at https://doi.org/10.1016/0039-6028(79)90514-4
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02 Feb 1979