Propagation of Surface Electromagnetic Waves on N-Type GaAs in the Far Infrared

Author

D. L. Begley
Ralph William Alexander, Missouri University of Science and TechnologyFollow
C. A. Ward
Robert John Bell, Missouri University of Science and Technology

Abstract

The Far Infrared (84.2 Cm-1) Propagation Distance of Surface Electromagnetic Waves on Samples of Single Crystal GaAs with Varied Carrier Concentrations Has Been Measured using the Twoprism Technique. the Experimental Propagation Distances Agree Well with Theoretical Values Obtained from Computer Calculations using the Exact Two Media Dispersion Relation. It Was Found that the Propagation of the SEW is Strongly Dependent Upon the Free Carrier Concentration of the GaAs Sample as Expected. It is Demonstrated that a Simple Classical Theory of SEW Works for GaAs-Air Interfaces in the Far Infrared. © 1979.

Recommended Citation

D. L. Begley et al., "Propagation of Surface Electromagnetic Waves on N-Type GaAs in the Far Infrared," Surface Science, vol. 81, no. 1, pp. 238 - 244, Elsevier, Feb 1979.

The definitive version is available at https://doi.org/10.1016/0039-6028(79)90514-4

Department(s)

Physics

Comments

Air Force Office of Scientific Research, Grant 76-2938

International Standard Serial Number (ISSN)

0039-6028

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2023 Elsevier, All rights reserved.

Publication Date

02 Feb 1979