Abstract
Using Molecular Dynamics Phonon Wave Packet Simulations, We Study Phonon Transmission Across Hexagonal (H)-BN and Amorphous Silica (A-SiO2) Nanoscopic Thin Films Sandwiched by Two Crystalline Leads. Due to the Phonon Interference Effect, the Frequency-Dependent Phonon Transmission Coefficient in the Case of the Crystalline Film (Si|h-BN|Al Heterostructure) Exhibits a Strongly Oscillatory Behavior. in the Case of the Amorphous Film (Si|a-SiO2|Al and Si|a-SiO2|Si Heterostructures), in Spite of Structural Disorder, the Phonon Transmission Coefficient Also Exhibits Oscillatory Behavior at Low Frequencies (Up to ∼1.2 THz), with a Period of Oscillation Consistent with the Prediction from the Two-Beam Interference Equation. above 1.2 THz, However, the Phonon Interference Effect is Greatly Weakened by the Diffuse Scattering of Higher-Frequency Phonons within an A-SiO2 Thin Film and at the Two Interfaces Confining the A-SiO2 Thin Film.
Recommended Citation
Z. Liang et al., "Phonon Interference in Crystalline and Amorphous Confined Nanoscopic Films," Journal of Applied Physics, vol. 121, no. 7, article no. 75303, American Institute of Physics, Feb 2017.
The definitive version is available at https://doi.org/10.1063/1.4976563
Department(s)
Mechanical and Aerospace Engineering
International Standard Serial Number (ISSN)
1089-7550; 0021-8979
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 American Institute of Physics, All rights reserved.
Publication Date
21 Feb 2017
