Photoluminescence of As-Grown and Thermally Annealed InGaAsN/GaAs Quantum Wells Grown by Molecular Beam Epitaxy

Author

Xiaodong Yang, Missouri University of Science and TechnologyFollow

Abstract

InGaAsN/GaAs quantum wells on GaAs substrates were grown by solid source molecular beam epitaxy using a N2 radio frequency plasma source. Photoluminescence (PL) reveals a redshift in the PL peak of InGaAsN/GaAs quantum well with increasing N concentration. Rapid thermal annealing (RTA) of InGaAsN/GaAs quantum wells is shown to increase N incorporation and photoluminescence efficiency. A PL peak of 1.35 µm has been obtained at room temperature from an InGaAsN/GaAs quantum well after RTA at 550 °C. Room temperature pulsed operation of InGaAsN/GaAs single quantum well laser was demonstrated. © 1999 American Vacuum Society.

Recommended Citation

X. Yang, "Photoluminescence of As-Grown and Thermally Annealed InGaAsN/GaAs Quantum Wells Grown by Molecular Beam Epitaxy," Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, American Institute of Physics (AIP), Jan 1999.

The definitive version is available at https://doi.org/10.1116/1.590710

Department(s)

Mechanical and Aerospace Engineering

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1999 American Institute of Physics (AIP), All rights reserved.

Publication Date

01 Jan 1999