Low Threshold InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy Using Sb Surfactant
Abstract
Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. Low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are achieved for broad area laser diodes (LD) operating at a wavelength of 1.275 ?m under pulsed operation at room temperature. The use of Sb as a surfactant is shown to improve the quality of the InGaAsN/GaAs quantum well.
Recommended Citation
X. Yang et al., "Low Threshold InGaAsN/GaAs Single Quantum Well Lasers Grown by Molecular Beam Epitaxy Using Sb Surfactant," Electronics Letters, The Institution of Engineering and Technology (The IET), Jan 1999.
The definitive version is available at https://doi.org/10.1049/el:19990763
Department(s)
Mechanical and Aerospace Engineering
International Standard Serial Number (ISSN)
0013-5194
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 1999 the Institution of Engineering and Technology (The IET), All rights reserved.
Publication Date
01 Jan 1999
