Microstructure-Electrical Transport Correlation in Ceramic Oxide Thin Films

Abstract

The relationship between the microstructure and electrical transport in ceramic oxide thin films is discussed using recent examples from the SrCeO3:Yb, CeO2 and ZrO2:Y systems. It was observed that when the microstructure was changed from the micro to nanometer range, the electrical conductivity showed a dependence upon the microstructure. This manifested itself in greatly enhanced specific grain boundary conductivity and reaction kinetics for specimens which were nanostructured as compared to those in the micrometer range. This behavior has been interpreted as being due to the predominant role of interfacial, grain boundary and impurity segregation effects.

Department(s)

Materials Science and Engineering

International Standard Serial Number (ISSN)

0196-6219

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 The Authors, All rights reserved.

Publication Date

01 Dec 1998

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