Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films

Author

Richard K. Brow, Missouri University of Science and TechnologyFollow
Carlo G. Pantano

Abstract

The Si 2p binding energies measured from a series of silicon oxynitride thin films are related to the nitrogen contents of the films using a simple Pauling charge distribution model. The linear relation found between the binding energy and the calculated charge is expected if Si-N bonds replace Si-O bonds as the nitrogen content of the films is increased.

Recommended Citation

R. K. Brow and C. G. Pantano, "Compositionally Dependent Si 2p Binding Energy Shifts in Silicon Oxynitride Thin Films," Journal of the American Ceramic Society, vol. 69, no. 4, pp. 314 - 316, John Wiley & Sons, Apr 1986.

The definitive version is available at https://doi.org/10.1111/j.1151-2916.1986.tb04738.x

Department(s)

Materials Science and Engineering

Sponsor(s)

National Science Foundation (U.S.)

Comments

Supported by the National Science Foundation under Grant No. DMR–8119476

International Standard Serial Number (ISSN)

0002-7820; 1551-2916

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1986 John Wiley & Sons, All rights reserved.

Publication Date

01 Apr 1986