Oxidation Resistant Sol-gel Derived Silicon Oxynitride Thin Films

Author

Richard K. Brow, Missouri University of Science and TechnologyFollow
Carlo G. Pantano

Abstract

Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

Recommended Citation

R. K. Brow and C. G. Pantano, "Oxidation Resistant Sol-gel Derived Silicon Oxynitride Thin Films," Applied Physics Letters, American Institute of Physics (AIP), Jan 1986.

The definitive version is available at https://doi.org/10.1063/1.96750

Department(s)

Materials Science and Engineering

International Standard Serial Number (ISSN)

0003-6951

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1986 American Institute of Physics (AIP), All rights reserved.

Publication Date

01 Jan 1986