Oxidation Resistant Sol-gel Derived Silicon Oxynitride Thin Films
Abstract
Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.
Recommended Citation
R. K. Brow and C. G. Pantano, "Oxidation Resistant Sol-gel Derived Silicon Oxynitride Thin Films," Applied Physics Letters, American Institute of Physics (AIP), Jan 1986.
The definitive version is available at https://doi.org/10.1063/1.96750
Department(s)
Materials Science and Engineering
International Standard Serial Number (ISSN)
0003-6951
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 1986 American Institute of Physics (AIP), All rights reserved.
Publication Date
01 Jan 1986
