Abstract
In this letter, the potential of single crystalline 4H-polytype silicon carbide (4H-SiC) based microelectromechanical structures as resistance thermometer for high temperature sensing were explored. A dopant-selective photoelectrochemical etching process was applied to release the sensing element – suspended microstructures on 4H-SiC substrate. Residual stress and stress gradient in the microstructure before and after release was examined by micro-Raman spectroscopy. Electrical resistance of the suspended microstructures at different temperatures were characterized and analyzed by a temperature-dependent electron mobility model.
Recommended Citation
C. Wells et al., "Stress and Thermal Characterization of 4H-SiC Microelectromechanical Structures," Materials Letters, vol. 191, pp. 196 - 199, Elsevier, Mar 2017.
The definitive version is available at https://doi.org/10.1016/j.matlet.2016.12.064
Department(s)
Electrical and Computer Engineering
Publication Status
Full Text Access
Keywords and Phrases
Micro-Raman; Microelectromechanical structure; Resistance thermometer; Silicon carbide; Temperature sensing
International Standard Serial Number (ISSN)
1873-4979; 0167-577X
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Elsevier, All rights reserved.
Publication Date
15 Mar 2017
Comments
National Science Foundation, Grant ECCS-1307237