Abstract
Due to the piezoelectric nature of GaN, the two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) could be engineered by strain. In this work, SiNx deposited using dual-frequency plasma-enhanced chemical vapor deposition (PECVD) was used as a stressor. The output performance of the devices was dominated by the surface passivation instead of the strain effect. However, the threshold voltage was increased by the liner-induced strain, supporting strain engineering as an effective approach to pursue the normally-off operation of AlGaN/GaN HEMTs.
Recommended Citation
W. C. Cheng et al., "Silicon Nitride Stress Liner Impacts on the Electrical Characteristics of AlGaN/GaN HEMTs," 2019 IEEE International Conference on Electron Devices and Solid State Circuits Edssc 2019, article no. 8754212, Institute of Electrical and Electronics Engineers, Jun 2019.
The definitive version is available at https://doi.org/10.1109/EDSSC.2019.8754212
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Gallium nitride (GaN); High electron mobility transistor (HEMT); Strain engineering
International Standard Book Number (ISBN)
978-172810286-3
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jun 2019
