Abstract
The concentration of the two-dimensional electron gas (2DEG) at the AlGaN/GaN heterojunction is dominated by the stress developed in AlGaN layer. In this work, the output performance of AlGaN/GaN high electron mobility transistors (HEMTs) was improved by depositing a stressed SiNx as a passivation layer, and the external strain applied onto AlGaN was measured using Raman spectroscopy. As a result, an improvement in on-state resistance and drive current of the device was attained due to the extra 2DEG concentration induced by the external strain. Also, to determine the strain-induced threshold-voltage shift, the stress distribution over the gate region was analyzed.
Recommended Citation
W. C. Cheng et al., "Improving the Drive Current of AlGaN/GaN HEMT using External Strain Engineering," 2019 Electron Devices Technology and Manufacturing Conference Edtm 2019, pp. 374 - 376, article no. 8731108, Institute of Electrical and Electronics Engineers, Mar 2019.
The definitive version is available at https://doi.org/10.1109/EDTM.2019.8731108
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
GaN; HEMT; Strain
International Standard Book Number (ISBN)
978-153866508-4
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Mar 2019
