Abstract
Resistive Random-Access Memory (ReRAM) is considered as one of the most promising non-volatile memory technologies because of its high scalability, fast switching speed, and low power consumption. While many review papers are focused on investigating material types, material properties, device fabrication methods, and device structures, the influence of electrical testing strategies on ReRAM performance has yet been reviewed, particularly for bio-organic-based ReRAM. This review compiled, analyzed, and discussed how compliance current, voltage sweep rate, voltage sweep range, and voltage sweeping direction affect the ON/OFF ratio, read memory window, and both SET and RESET voltages of ReRAM.
Recommended Citation
M. Awais et al., "Impact of Electrical Testing Strategies on the Performance Metrics of Bio-organic-Based Resistive Switching Memory," MRS Communications, vol. 14, no. 6, pp. 1281 - 1287, article no. 105356, Springer, Dec 2024.
The definitive version is available at https://doi.org/10.1557/s43579-024-00653-1
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
2159-6867; 2159-6859
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Springer, All rights reserved.
Publication Date
01 Dec 2024
Comments
Ministry of Higher Education, Malaysia, Grant 2104976