Abstract
Resistive switching behaviors in Aloe vera films are being explored for nonvolatile memory applications. A simple structure in which the Aloe vera films sandwiched in between a top and bottom electrode are used. The switching behaviors of the devices in which the Aloe vera film is dried at different temperatures and the roles of top electrode materials (Al and Ag) are investigated. Current density-voltage measurements reveal that filamentary conduction is the dominant conduction process inducing resistive switching characteristics in Aloe vera films. Device with Al-Top electrode requires a forming voltage higher than devices with Ag-Top electrode, due to the tendency of oxide formation of these materials. The resistive switching behaviors are highly reproducible, as demonstrated by the data retention performance over an interval of 104 s and endurance capability of over 100 cycles.
Recommended Citation
Z. X. Lim et al., "Effects of Electrode Materials on Charge Conduction Mechanisms of Memory Device based on Natural Aloe Vera," MRS Advances, vol. 1, no. 36, pp. 2513 - 2518, Springer; Materials Research Society, Jan 2016.
The definitive version is available at https://doi.org/10.1557/adv.2016.522
Department(s)
Electrical and Computer Engineering
International Standard Serial Number (ISSN)
2059-8521
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Springer; Materials Research Society, All rights reserved.
Publication Date
01 Jan 2016
Comments
University of Southern Maine, Grant 814216