Abstract
As a wide bandgap and single crystalline semiconductor, 4H-polytype silicon carbide (4H-SiC) is an excellent material choice for devices operating in harsh environments of high temperature, high pressure, radiation, chemical and biomedical, etc. In this letter, an electrostatically actuated 4H-SiC micro resonator was fabricated by dopant-selective photoelectrochemical etching of n-p-n homoepitaxial structure. Resonant frequencies of 3.463 MHz (out-of-plane) and 16.9 MHz (in-plane) were attained, and they are in good agreement with theoretical calculation. To the best of our knowledge, these frequencies are the highest values ever reported from single crystalline 4H-SiC MEMS resonators.
Recommended Citation
A. V. Lim et al., "Electrostatically-actuated 4H-SiC In-plane and Out-of-plane High Frequency MEMS Resonator," IEEE Microwave and Wireless Components Letters, vol. 26, no. 1, pp. 28 - 30, article no. 7353232, Institute of Electrical and Electronics Engineers, Jan 2016.
The definitive version is available at https://doi.org/10.1109/LMWC.2015.2505620
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
4H-SiC; Electrostatic actuation; Microresonator; Photoelectrochemical etching; Resonant frequency
International Standard Serial Number (ISSN)
1531-1309
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jan 2016
Comments
National Science Foundation, Grant ECCS-1307237