Abstract

The rising environmental awareness has spurred the extensive use of green materials in electronic applications, with bio-organic materials emerging as attractive alternatives to inorganic and organic materials due to their natural biocompatibility, biodegradability, and eco-friendliness. This study showcases the natural rubber (NR) based resistive switching (RS) memory devices and how varying Sulphur concentrations (0-0.8 wt.%) in NR thin films impact the RS characteristics. The NR was formulated and processed into a thin film deposited on an indium tin oxide substrate as the bottom electrode and with an Ag film as the top electrode. The addition of Sulphur modifies the degree of crosslinking in the NR thin film, from which the concentration of -C=C- group and density of defect site (S+) are affected, and hence the RS behavior of the memory device. The devices exhibit bipolar resistance with symmetric switching characteristics which are attributed to the formation of conductive paths facilitate by electron transport along -C=C- and S+ defect sites between the two electrodes. Notably, a sample with 0.2 wt.% Sulphur exhibits a high ON/OFF ratio (104), a large memory window (5.5 V), prolonged data retention (10 yrs), and reliable endurance (120 cycles). These findings highlight the potential of NR as a promising material for eco-friendly resistive-switching random access memory applications.

Department(s)

Electrical and Computer Engineering

Comments

Ministry of Higher Education, Malaysia, Grant 2104976

Keywords and Phrases

crosslinking; natural rubber; resistive-switching memory; sulphur

International Standard Serial Number (ISSN)

1361-6528; 0957-4484

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2025 IOP Publishing, All rights reserved.

Publication Date

20 Jan 2025

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