Abstract

The recent upsurge in environmental awareness provokes the widespread usage of green materials in sustainable electronic applications. Herein, the effects of spent coffee grounds (SCGs) on natural rubber (NR)-based resistive switching (RS) memory are systematically investigated. This study presents the fabrication of a metal-insulator-metal (MIM) structure using NR incorporated with SCGs (0 to 8 wt.%) as a memristive layer and sandwiched between electrodes. A significant improvement in the ON/OFF ratio from 104 for pure NR to 107, read memory window increased from 2.03 to 2.45 V with improved stability even after 130 cycles of switching is achieved with the optimal concentration of SCGs (6 wt.%). The improved performance after the incorporation of SCGs is attributed to the introduction of key chemical functional groups (C═O, C═C) in the memristive film. By varying the viscosity of NR, bending of test structure, and voltage sweep rate, the effects of trap density and location on the RS performance are established. The RS mechanisms in high and low resistance states are dominated by space-charge-limited conduction and Ohm's law, respectively. This research manifests the potential of SCGs in improving the RS performance of bioorganic-based memory devices.

Department(s)

Electrical and Computer Engineering

Publication Status

Full Access

Comments

Ministry of Higher Education, Malaysia, Grant 2247342

Keywords and Phrases

bio-organic material; natural rubber; resistive switching memory; spent coffee grounds

International Standard Serial Number (ISSN)

1613-6829; 1613-6810

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2025 Wiley, All rights reserved.

Publication Date

14 Aug 2025

PubMed ID

40519074

Download

Full Text Link

Share

 
COinS