Abstract
In this letter, a novel edge termination named deep junction termination for silicon super junction (SJ) MOSFETs is proposed, simulated, and experimentally demonstrated for the first time. By utilizing a typical implantation-and-epitaxy process to form P- and N-pillars for SJ, it is possible to form deep junctions as the device termination with a large radius of curvature and lateral and vertical doping gradation. The 2-D simulation shows that more than 700-V blocking voltage (BV) can be achieved by a 57-drift layer with this novel termination, and experimentally BV as high as 660 V is demonstrated by the fabricated device.
Recommended Citation
C. H. Cheng et al., "A Novel Deep Junction Edge Termination for Superjunction MOSFETs," IEEE Electron Device Letters, vol. 39, no. 4, pp. 544 - 547, Institute of Electrical and Electronics Engineers, Apr 2018.
The definitive version is available at https://doi.org/10.1109/LED.2018.2803199
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
deep junction; edge termination; MOSFET; Superjunction
International Standard Serial Number (ISSN)
0741-3106
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Apr 2018
