A Review of Zno-Based Thin Films, Devices, and Applications
Abstract
Zinc oxide (ZnO), as an II-VI compound semiconductor, has been receiving growing attention in the last decade due to its spectacular electrical, optical, and magnetic properties. Its direct wide band gap of 3.3 eV, high exciton binding energy (60 meV compared to 21-25 meV for GaN), large dielectric constant (8.5), high transparency of above 75% in the visible region of spectrum, large electron mobility, along with earth abundancy and non-toxicity has made ZnO as a promising material for various optical, electrical, and magnetic applications. This review chapter will focus on two major areas of: 1) growth and characterization of high quality and defect-free p-and n-type ZnO thin films on different substrates using various growth techniques, such as metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and sputtering, and 2) application of ZnO thin films in energy harvesting, microelectronic, and magnetic devices. These will include, but not limited to ZnO-based thermoelectric generator, solar cells, thin film transistors, and spintronic and neuromorphic devices.
Recommended Citation
A. Ghods et al., "A Review of Zno-Based Thin Films, Devices, and Applications," ZnO Thin Films: Properties, Performance and Applications, pp. 1 - 42, Elsevier, Jan 2019.
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
compound semiconductor; crystal growth; energy harvesting; epitaxy; nanostructured microelectronics; neuromorphic devices; optoelectronics; spintronics; zinc oxide (ZnO)
International Standard Book Number (ISBN)
978-153616087-1
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Elsevier, All rights reserved.
Publication Date
01 Jan 2019
