Transition Metal and Rare Earth Doping in GaN
Abstract
Wide-bandgap dilute magnetic semiconductors have been of interest in the past decade due to theoretical predictions of room-temperature ferromagnetism in these materials. This chapter provides a synopsis of the progress made to date in GaN based with various transition metals (Mn, Fe, Cr) and rare earth elements (Gd). After a brief summary of the different exchange mechanism present in these materials, experimental results on the optical, structural, and magnetic properties of nitride-based dilute magnetic semiconductors are presented. Preliminary device investigations using light emitting diodes with Mn- and Gd-doped layers incorporated into the device structure are also explored in this chapter.
Recommended Citation
M. H. Kane et al., "Transition Metal and Rare Earth Doping in GaN," Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics, pp. 315 - 370, Elsevier, Feb 2016.
The definitive version is available at https://doi.org/10.1016/B978-0-08-100041-0.00010-X
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Dilute magnetic semiconductors; Doping; Exchange mechanisms; Rare earth elements; Spintronics; Transition metals
International Standard Book Number (ISBN)
978-008100060-1;978-008100041-0
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Elsevier, All rights reserved.
Publication Date
23 Feb 2016
