Abstract
By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices. © 2013 IEEE.
Recommended Citation
J. Z. Huang et al., "Full-quantum Simulation Of P-type Junctionless Transistors With Multi-band K · P Model," 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013, article no. 6628164, Institute of Electrical and Electronics Engineers, Dec 2013.
The definitive version is available at https://doi.org/10.1109/EDSSC.2013.6628164
Department(s)
Electrical and Computer Engineering
International Standard Book Number (ISBN)
978-146732523-3
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
23 Dec 2013
