"Full-quantum Simulation Of P-type Junctionless Transistors With Multi-" by Jun Z. Huang, Weng Cho Chew et al.
 

Abstract

By adopting a model order reduction technique, we have successfully constructed a program for efficient simulation of nanowire transistors based on the multi-band k · p model and non-equilibrium Green's function (NEGF) approach. We then study for the first time the influences of various device parameters on the performances of p-type junctionless (JL) transistors and compare them to traditional inversion mode (IM) devices. © 2013 IEEE.

Department(s)

Electrical and Computer Engineering

International Standard Book Number (ISBN)

978-146732523-3

Document Type

Article - Conference proceedings

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.

Publication Date

23 Dec 2013

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