Abstract
An efficient method is developed for multiband simulation of quantum transport in nanowire electronic devices within nonequilibrium Green's function formalism. The efficiency relies on a model order reduction technique, which projects the k.p Hamiltonian into a much smaller subspace constructed by sampling the Bloch modes of each cross-section layer. Several sampling approaches are discussed to obtain a minimum and accurate basis with reduced computational overhead. The technique is verified by calculating the valence bands of silicon nanowires (SiNWs) and by solving I-V curves of p-type SiNW transistors. This enables us to study for the first time the performances of large cross-section p-type junctionless (JL) transistors in the quantum ballistic transport limit. The influences of doping density, transport direction, channel length, and cross-section size are examined. We find that larger doping densities may lead to worse sub-threshold slopes due to the enhanced source-to-drain tunneling. Compared with their counterparts, i.e., classical inversion-mode (IM) transistors, they have better sub-threshold behaviors, but they do not necessarily provide a better ON/OFF ratio except when the channel is short or thin. In addition, unlike IM transistors, [110] and [111] channel directions in JL transistors are very robust against channel thicknes scaling. © 1963-2012 IEEE.
Recommended Citation
J. Z. Huang et al., "Model Order Reduction For Multiband Quantum Transport Simulations And Its Application To P-type Junctionless Transistors," IEEE Transactions on Electron Devices, vol. 60, no. 7, pp. 2111 - 2119, article no. 6522517, Institute of Electrical and Electronics Engineers, Jul 2013.
The definitive version is available at https://doi.org/10.1109/TED.2013.2260546
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Junctionless transistors; k.p approach; model order reduction (MOR); multiband simulation; nonequilibrium Green's function (NEGF); quantum transport; silicon nanowire transistors
International Standard Serial Number (ISSN)
0018-9383
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2024 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
15 Jul 2013
