Abstract
Due to the fast-switching nature of modern power converters, up to hundreds of MHz of common-mode noise can easily be generated. The characterization of switching components, e.g., Si MOSFETs, is essential for noise reduction. However, limited by the bandwidth of instruments, the voltage-dependent capacitances of high voltage MOSFETs are typically characterized at approximately 1 MHz, which is insufficient for EMI applications. In this paper, the measurement method and the test fixtures are presented. The measurement bandwidth is pushed to 30 MHz and higher, and frequency-dependent capacitances of a MOSFET are observed through measurements.
Recommended Citation
A. Huang et al., "Fixture Design for Parasitic Capacitances of Mosfets for Emi Applications," 2022 Asia-Pacific International Symposium on Electromagnetic Compatibility, APEMC 2022, pp. 267 - 269, Institute of Electrical and Electronics Engineers, Jan 2022.
The definitive version is available at https://doi.org/10.1109/APEMC53576.2022.9888631
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
MOSFET; voltage-dependent capacitances
International Standard Book Number (ISBN)
978-166541671-9
Document Type
Article - Conference proceedings
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2023 Institute of Electrical and Electronics Engineers, All rights reserved.
Publication Date
01 Jan 2022
