An Approach to Characterize Behavior of Multiport ICs under ESD Stress
Abstract
ESD characterization of an RF switch was investigated by measuring and analyzing the voltage and current at its input and output ports. This characterization shows the device starts conducting during ESD events, allowing more than 1 A of current to pass through and raising the output voltage to ~30 V.
Recommended Citation
O. H. Izadi et al., "An Approach to Characterize Behavior of Multiport ICs under ESD Stress," Proceedings of the 41st Annual Electrical Overstress/Electrostatic Discharge Symposium (2019, Riverside, CA), ESD Association, Sep 2019.
The definitive version is available at https://doi.org/10.23919/EOS/ESD.2019.8870004
Meeting Name
41st Annual Electrical Overstress/Electrostatic Discharge Symposium, EOS/ESD 2019 (2019: Sep. 15-20, Riverside, CA)
Department(s)
Electrical and Computer Engineering
Research Center/Lab(s)
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
Integrated Circuits; Timing Circuits, ESD Stress; Input and Outputs; Multi-Port; Output Voltages; RF Switch, Electrostatic Devices
International Standard Book Number (ISBN)
978-158537311-6
International Standard Serial Number (ISSN)
0739-5159
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2019 ESD Association, All rights reserved.
Publication Date
01 Sep 2019
Comments
This material is based upon work supported by the National Science Foundation (NSF) under Grants IIP1440110.