Full-Wave Simulation of System-Level Disruption during Secondary ESD Events in a Smartphone
Abstract
To demonstrate the electromagnetic full-wave simulation of a secondary electrostatic discharge (ESD), an ESD generator is modeled in three dimensions (3D) and in contact mode discharging to a non-grounded, metallic ear-mesh of a smartphone. The nonlinear Rompe–Weizel SPICE model computes the arc resistance of the secondary discharge between ungrounded metal and a grounded enclosure. The SPICE model is solved using a circuit simulator, and the 3-D model is solved using the transmission-line matrix time-domain numerical method. Transient cosimulation is a new technique that is used to solve both circuit and 3-D models at the same time. The simulation predicts the coupling from ESD to a victim trace in the smartphone. Measurements performed at several stages validate the simulation results. Using this novel methodology, the user can simulate the secondary discharge in products to predict ESD damage and disruption on a system level.
Recommended Citation
D. Z. Li et al., "Full-Wave Simulation of System-Level Disruption during Secondary ESD Events in a Smartphone," IEEE Transactions on Electromagnetic Compatibility, vol. 61, no. 1, pp. 40 - 47, Institute of Electrical and Electronics Engineers (IEEE), Feb 2019.
The definitive version is available at https://doi.org/10.1109/TEMC.2018.2815024
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Breakdown Voltage; Cellular Phones; Circuit Simulation; Current Measurement; Electromagnetic Coupling; Electrostatic Discharge (ESD); Numerical Simulation; Spark Gaps; Time-Domain Analysis
International Standard Serial Number (ISSN)
0018-9375
Document Type
Article - Journal
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2019 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Feb 2019
