Evidence of Interaction Between Two DX Centers in N-Type AlGaAs from RDLTS and Temperature Dependent Pulse-Width DLTS Measurements
Two well-separated electron traps with activation energies: Et ≅ 0.286 eV and Et ≅ 0.433 eV have been consistently detected in the n-type Al0.6Ga0.4As confinement layer of AlGaAs/GaAs single quantum well laser diodes. The physical characteristic parameters for these two traps, including capture cross section, emission time constant, and capture time constant, have been calculated. Reverse-bias pulsed deep level transient spectroscopy (RDLTS) results provide the evidence for the first time that these two traps have strong interaction during emission processes. This allows us to conclude that Et 1 and Et 2 are indeed both donor-unknown centers. Furthermore, using a temperature-dependent pulse-width method, DLTS signals from Et 1 alone can be obtained. The corrected activation energy appears to be a little shallower at Et ≅ 0.265 eV.
C. W. Wang et al., "Evidence of Interaction Between Two DX Centers in N-Type AlGaAs from RDLTS and Temperature Dependent Pulse-Width DLTS Measurements," Journal of Electronic Materials, vol. 22, no. 2, pp. 165-170, Springer Verlag, Feb 1993.
The definitive version is available at https://doi.org/10.1007/BF02665022
Electrical and Computer Engineering
Keywords and Phrases
Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor lasers; Semiconductor quantum wells; Spectroscopy; Substrates; Aluminum gallium arsenide; Reverse bias pulsed deep level transient spectroscopy; Semiconductor devices; Deep level transient spectroscopy (DLTS); Donor-unknown (DX) centers; Interaction
International Standard Serial Number (ISSN)
Article - Journal
© 1993 Springer Verlag, All rights reserved.
01 Feb 1993