An On-Chip Detector of Transient Stress Events
Abstract
Testing and debugging of electrostatic discharge (ESD) or electrical fast transient (EFT) issues in modern electronic systems can be challenging. The following paper describes the design of an on-chip circuit which detects and stores the occurrence of a fast transient stress event at the ESD protection structures in an I/O pad. Measurements and simulations of a test circuit in 90 nm technology show it can accurately detect and record the presence of a transient stress event with a peak current as low as 0.9 A or duration as short as 1 ns and that the detector works well across typical temperature and process variations. The small size of the detector will allow it to be used effectively even in low-cost commercial ICs
Recommended Citation
A. Patnaik and M. Suchak and R. Seva and K. Pamidimukkala and D. Pommerenke and G. Edgington and R. Moseley and J. Feddeler and M. Stockinger and D. G. Beetner, "An On-Chip Detector of Transient Stress Events," Proceedings of the 2017 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity (2017, Washington, DC), pp. 146 - 151, Institute of Electrical and Electronics Engineers (IEEE), Jan 2017.
The definitive version is available at https://doi.org/10.1109/ISEMC.2017.8077857
Meeting Name
2017 IEEE International Symposium on Electromagnetic Compatibility & Signal/Power Integrity, EMCSI (2017: Aug. 7-11, Washington, DC)
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
Electrical Fast Transient (EFT); Electrostatic Discharge (ESD); ESD Detectors; On-Chip Measurements; System Level ESD
International Standard Book Number (ISBN)
978-1-5386-2229-2
International Standard Serial Number (ISSN)
2158-1118
Document Type
Article - Conference proceedings
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2017 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jan 2017
