Abstract
Most electrostatic discharge (ESD) generators are built in accordance with the IEC 61000-4-2 specifications. It is shown, that the voltage induced in a small loop correlates with the failure level observed in an ESD failure test on the systems comprised of fast CMOS devices, while rise time and derivative of the discharge current did not correlate well. The electric parameters of typical ESD generators and ESD generators that have been modified to reflect the current and field parameters of the human metal reference event are compared and the effect on the failure level of fast CMOS electronics is investigated. The consequences of aligning an ESD standard with the suggestions of the first paper, of this two-paper series, are discussed with respect to reproducibility and test severity.
Recommended Citation
K. Wang et al., "Characterization of Human Metal ESD Reference Discharge Event and Correlation of Generator Parameters to Failure Levels-Part II: Correlation of Generator Parameters to Failure Levels," IEEE Transactions on Electromagnetic Compatibility, Institute of Electrical and Electronics Engineers (IEEE), Jan 2004.
The definitive version is available at https://doi.org/10.1109/TEMC.2004.837688
Department(s)
Electrical and Computer Engineering
Keywords and Phrases
ESD Generator; Electrostatic Discharge; Fast CMOS System; Induced Loop Voltage
International Standard Serial Number (ISSN)
0018-9375
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 2004 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Jan 2004
