Abstract
Simple design maxims to restrict slot dimensions in enclosure designs below a half-wave length are not always adequate for minimizing electromagnetic interference (EMI). Complex interactions between cavity modes, sources, and slots can result in appreciable radiation through nonresonant length slots. The finite-difference time domain (FDTD) method can be employed to pursue these issues with adequate modeling of thin slots. Subcellular FDTD algorithms for modeling thin slots in conductors have previously been developed. One algorithm based on a quasistatic approximation has been shown to agree well with experimental results for thin slots in planes. This FDTD thin-slot algorithm is compared herein with two-dimensional (2-D) moment method results for thin slots near corners and plane wave excitation. FDTD simulations are also compared with measurements for slots near an edge of a cavity with an internal source.
Recommended Citation
M. Li et al., "Numerical and Experimental Corroboration of an FDTD Thin-Slot Model for Slots Near Corners of Shielding Enclosures," IEEE Transactions on Electromagnetic Compatibility, vol. 39, no. 3, pp. 225 - 232, Institute of Electrical and Electronics Engineers (IEEE), Aug 1997.
The definitive version is available at https://doi.org/10.1109/15.618050
Department(s)
Electrical and Computer Engineering
Research Center/Lab(s)
Electromagnetic Compatibility (EMC) Laboratory
Keywords and Phrases
2D Moment Method; EM Radiation; FDTD Simulations; FDTD Thin Slot Algorithm; FDTD Thin-Slot Model; Approximation Theory; Cavity Modes; Conductor; Corners; Electromagnetic Interference; Electromagnetic Shielding; Enclosure Designs; Experimental Results; Finite Difference Time-Domain Analysis; Finite-Difference Time Domain; Half-Wave Length; Interference Suppression; Measurements; Method of Moments; Nonresonant Length Slots; Plane Wave Excitation; Quasistatic Approximation; Shielding Enclosures; Slot Dimensions; Sources; Subcellular FDTD Algorithms; Two-Dimensional Moment Method; EMI; FDTD; Slots
International Standard Serial Number (ISSN)
0018-9375; 1558-187X
Document Type
Article - Journal
Document Version
Final Version
File Type
text
Language(s)
English
Rights
© 1997 Institute of Electrical and Electronics Engineers (IEEE), All rights reserved.
Publication Date
01 Aug 1997