Development of Ti-Si-N and Ta-Si-N as diffusion barriers

Author

Shaoxin You

Keywords and Phrases

Diffusion barrier

Abstract

"Sputter deposited Ti-Si-N and Ta-Si-N films with different compositions were fabricated using Ti, Si, TiSi₂, and Ta targets in Ar/N₂ plasmas with a variety of deposition parameters. A fractional factorial design (FFD) method was used to identify the significant deposition variables for the Ti-Si-N film deposition. The properties of the films as diffusion barriers between Cu and Si were studied using sheet resistance measurements, X-ray diffractometry (XRD), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), auger electron spectroscopy (AES) and annealing in a controlled ambient atmosphere"--Abstract, page iv.

Department(s)

Materials Science and Engineering

Degree Name

Ph. D. in Materials Science and Engineering

Publisher

University of Missouri--Rolla

Publication Date

Spring 2006

Journal article titles appearing in thesis/dissertation

• Characterization of reactively sputtered Ti-Si-N films
• Development of Ti-Si-N thin films as diffusion barriers between Cu and Si
• Development of Ta-Si-N thin films as diffusion barriers between Cu and Si
• Use of experimental design to improve the adhesion strength in Meso-MEMS RF switches

Pagination

xix, 175 pages

Note about bibliography

Includes bibliographical references.

Rights

© 2006 Shaoxin You, All rights reserved.

Document Type

Dissertation - Citation

File Type

text

Language

English

Subject Headings

Sputtering (Physics)DiffusionMetallizingTitaniumTantalumSiliconNitrogen

Thesis Number

T 8837

Print OCLC #

74843529

Recommended Citation

You, Shaoxin, "Development of Ti-Si-N and Ta-Si-N as diffusion barriers" (2006). Doctoral Dissertations. 1639.
https://scholarsmine.mst.edu/doctoral_dissertations/1639