Mössbauer Effect and Lattice Parameter for Silicon Doped with Antimony

Author

James Ralph Teague
C. M. Yagnik
Gary J. Long, Missouri University of Science and TechnologyFollow
Robert Gerson, Missouri University of Science and TechnologyFollow
L. Dwynn Lafleur

Abstract

Monocrystalline dislocation-free silicon, having an antimony concentration of from 3 × 10¹⁸ to 9 × 10¹⁸ atoms per cm³, was investigated by Mössbauer spectrometry at 80°K using the 37.2 keV γ-ray of ¹²¹Sb. A single line pattern was found, with a line width of 2.5 mm/sec and an isomer shift varying from 1.32 mm/sec to 0.68 mm/sec (referred to InSb) over the indicated range. The lattice parameter for material increased from 5.4304₅ Å to 5.4309₉ Å over the same range. The variation in isomer shift may be due to the lattice expansion.

Recommended Citation

J. R. Teague et al., "Mössbauer Effect and Lattice Parameter for Silicon Doped with Antimony," Solid State Communications, vol. 9, no. 19, pp. 1695 - 1698, Elsevier Limited, Oct 1971.

The definitive version is available at https://doi.org/10.1016/0038-1098(71)90343-7

Department(s)

Chemistry

Second Department

Physics

International Standard Serial Number (ISSN)

0038-1098

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1971 Elsevier Limited, All rights reserved.

Publication Date

01 Oct 1971