Mössbauer Effect and Lattice Parameter for Silicon Doped with Antimony
Monocrystalline dislocation-free silicon, having an antimony concentration of from 3 × 1018 to 9 × 1018 atoms per cm3, was investigated by Mössbauer spectrometry at 80°K using the 37.2 keV γ-ray of 121Sb. A single line pattern was found, with a line width of 2.5 mm/sec and an isomer shift varying from 1.32 mm/sec to 0.68 mm/sec (referred to InSb) over the indicated range. The lattice parameter for material increased from 5.43045 Å to 5.43099 Å over the same range. The variation in isomer shift may be due to the lattice expansion.
J. R. Teague et al., "Mössbauer Effect and Lattice Parameter for Silicon Doped with Antimony," Solid State Communications, vol. 9, no. 19, pp. 1695-1698, Elsevier Limited, Oct 1971.
The definitive version is available at http://dx.doi.org/10.1016/0038-1098(71)90343-7
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