"Mössbauer Effect and Lattice Parameter for Silicon Doped with Antimony" by James Ralph Teague, C. M. Yagnik et al.
 

Mössbauer Effect and Lattice Parameter for Silicon Doped with Antimony

Abstract

Monocrystalline dislocation-free silicon, having an antimony concentration of from 3 × 1018 to 9 × 1018 atoms per cm3, was investigated by Mössbauer spectrometry at 80°K using the 37.2 keV γ-ray of 121Sb. A single line pattern was found, with a line width of 2.5 mm/sec and an isomer shift varying from 1.32 mm/sec to 0.68 mm/sec (referred to InSb) over the indicated range. The lattice parameter for material increased from 5.43045 Å to 5.43099 Å over the same range. The variation in isomer shift may be due to the lattice expansion.

Department(s)

Chemistry

Second Department

Physics

International Standard Serial Number (ISSN)

0038-1098

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 1971 Elsevier Limited, All rights reserved.

Publication Date

01 Oct 1971

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