Department
Physics
Major
Physics
Research Advisor
Chernatynskiy, Aleksandr V.
Advisor's Department
Physics
Funding Source
Department of Energy's Nuclear Energy University Program
Abstract
Aluminum Nitride is an active element of sensors that monitor the performance and well-being of the nuclear reactors due to its piezoelectric properties. Yet, the variations of its properties under irradiation are largely unexplored. Here, we report the results of the molecular dynamics simulations of the structural changes in AlN under irradiation via the knock-on atom technique. By creating and evolving the irradiation cascades due to energetic particle interaction with the atom of the crystalline lattice we determine the rate of the defect production as a function of the deposited energy. Further, we determine a displacement energy, a key characteristic that describes how efficient the defect production in the given material is. Comparison with the isostructural GaN is provided.
Biography
Sean Anderson is a Senior Physics major from Warrensburg, Missouri, and is also pursuing a minor in Computer Science. He is an active member of the Socity of Physics Students on campus, and serves as their Vice President. It is with the SPS that he first heard of and got the chance to work with Professor Chernatisnkiy, and worked with him for a semester before joining the OURE program.. He plans to graduate in 2022, and plans to move on to Grad School after that.
Research Category
Sciences
Presentation Type
Oral Presentation
Document Type
Presentation
Presentation Date
27 Apr 2017, 9:00 am - 9:15 am
Included in
The Effect of Irradiating AlN on its Dielectric Properties
Aluminum Nitride is an active element of sensors that monitor the performance and well-being of the nuclear reactors due to its piezoelectric properties. Yet, the variations of its properties under irradiation are largely unexplored. Here, we report the results of the molecular dynamics simulations of the structural changes in AlN under irradiation via the knock-on atom technique. By creating and evolving the irradiation cascades due to energetic particle interaction with the atom of the crystalline lattice we determine the rate of the defect production as a function of the deposited energy. Further, we determine a displacement energy, a key characteristic that describes how efficient the defect production in the given material is. Comparison with the isostructural GaN is provided.
