Thermal Transport Properties of GaN via MD

Presenter Information

Zachary Driemeyer

Department

Physics

Major

Physics

Research Advisor

Chernatynskiy, Aleksandr V.

Advisor's Department

Physics

Funding Source

OURE

Abstract

Gallium Nitride is a key material for the future of high-power electronics. Such devices are characterized by very large electric current which in turn generates enormous amounts of heat. Removal of this heat from the device depends crucially on the thermal conductivity of GaN and thermal conductance through its interface with other components of the device. The goal of this project is to determine the thermal transport properties of GaN both internally and across a resistant grain boundary. In this work, we are determined these properties using Non-Equilibrium Molecular Dynamics technique via community code LAMMPS. Results of the simulations are compared to experimental measurements and ab-initio caculations.

Biography

Zach is a sophomore physics major with a minor in mathematics from House Springs, Missouri. He tutors low-level classes in the Toomey Student Success Center and works at a dog boarding and day camp facility in Valley Park, Missouri. In his free time he enjoys reading and long walks.

Research Category

Sciences

Presentation Type

Poster Presentation

Document Type

Poster

Location

Upper Atrium

Presentation Date

16 Apr 2019, 9:00 am - 3:00 pm

This document is currently not available here.

Share

COinS
 
Apr 16th, 9:00 AM Apr 16th, 3:00 PM

Thermal Transport Properties of GaN via MD

Upper Atrium

Gallium Nitride is a key material for the future of high-power electronics. Such devices are characterized by very large electric current which in turn generates enormous amounts of heat. Removal of this heat from the device depends crucially on the thermal conductivity of GaN and thermal conductance through its interface with other components of the device. The goal of this project is to determine the thermal transport properties of GaN both internally and across a resistant grain boundary. In this work, we are determined these properties using Non-Equilibrium Molecular Dynamics technique via community code LAMMPS. Results of the simulations are compared to experimental measurements and ab-initio caculations.