Nonvolatile Resistance Switching in Electrodeposited Mn3O4
Major
Chemical Engineering
Research Advisor
Switzer, Jay A., 1950-
Advisor's Department
Chemistry
Funding Source
U.S. Department of Energy grant DE-FG02-08ER46518; National Science Foundation grant DMR-1104801
Abstract
A novel synthesis method of Mn3O4 thin films is presented. Crystalline films of Mn3O4 are deposited by electrochemical oxidizing an acetate complex of Mn2+ in aqueous, weakly acidic solution at 80 °C. The morphology of resulting films is affected by the deposition parameters. The concentration of Mn(ll)(OAc)2 has the most pronounced effect on the resulting morphology. No influence of the deposition parameters on the deposit structure was observed. The resistive switching (RS) capabilities of Mn3O4 thin films are investigated. The films show filamentary, non-volatile RS behavior. The material can be switched hundreds of times between high (HRS) and low resistance (LRS) states. The switching parameters are stable in repetitive experiments. The states are persistent over time. This opens up the possibility to use the method to produce electrodeposited Mn3O4 solid-state memories as an inexpensive alternative to ultra-high vacuum (UHV) technologies.
Biography
Ian joined the military after high school and spent 5 years in the armed services after which he went back to school. He is attending Missouri University of Science and Technology in order to obtain a B. S. in Chemical Engineering. He will be graduating in May 2015 from Missouri University of Science and Technology.
Research Category
Sciences
Presentation Type
Oral Presentation
Document Type
Presentation
Location
Turner Room
Presentation Date
03 Apr 2013, 11:00 am - 11:30 am
Nonvolatile Resistance Switching in Electrodeposited Mn3O4
Turner Room
A novel synthesis method of Mn3O4 thin films is presented. Crystalline films of Mn3O4 are deposited by electrochemical oxidizing an acetate complex of Mn2+ in aqueous, weakly acidic solution at 80 °C. The morphology of resulting films is affected by the deposition parameters. The concentration of Mn(ll)(OAc)2 has the most pronounced effect on the resulting morphology. No influence of the deposition parameters on the deposit structure was observed. The resistive switching (RS) capabilities of Mn3O4 thin films are investigated. The films show filamentary, non-volatile RS behavior. The material can be switched hundreds of times between high (HRS) and low resistance (LRS) states. The switching parameters are stable in repetitive experiments. The states are persistent over time. This opens up the possibility to use the method to produce electrodeposited Mn3O4 solid-state memories as an inexpensive alternative to ultra-high vacuum (UHV) technologies.
