Location
Innovation Lab, Room 212
Start Date
4-2-2025 2:30 PM
End Date
4-2-2025 3:00 PM
Presentation Date
2 April 2025, 2:30pm - 3:00pm
Biography
Herkenhoff biography:
Lana Herkenhoff is a junior Physics student with an emphasis in Education. She is an active member in Kappa Delta and enjoys helping her sisters study for their physics classes. She works as a Physics Learning Center tutor and a substitute teacher and is incredibly interested in pursuing a career in Physics Education. In her free time, she enjoys applying her physics knowledge to movies and shows and determining the feasibility of the actions on screen.
Stillmaker biography:
Braden Stillmaker is a junior majoring in physics at Missouri S&T. He is passionate about challenging himself academically and is actively involved in the school’s competition math club and Foundations for Undergraduate Mathematicians. He also works as a grader of a Topics in Geometry class for Dr. Lungstrum. Additionally, he is a member of the Honor’s Academy. Beyond academics, Braden is an avid runner, competing for Missouri S&T’s cross country and track teams.
Turlapati biography:
Punit Turlapati is a junior double majoring in Physics and Computer Science, graduating in May 2026. He finds the various intersections of both fields fascinating. On campus, he’s an active member of Alpha Epsilon Pi, the Miner Theatre Guild, and the Quantum Computing Club. Beyond academics, Punit enjoys 3D modelling and building LEGO. He also works as a software developer at a start-up, where he builds tools that help dog shows run more efficiently.
Department(s)
Physics
Second Department
Computer Science
Document Type
Presentation
Document Version
Citation
File Type
text
Language(s)
English
Rights
© 2025 The Authors, All rights reserved
Replicating and Testing the First Point-Contact Transistor
Innovation Lab, Room 212
Comments
Advisor: Hyunsoo Kim
Abstract:
Despite being the first transistors created, the point-contact transistor’s mechanism remains elusive due to difficulty in theoretical explanation at the microscopic level. The nature of the separation between the two point-contacts is poorly comprehended, but potentially crucial to understanding the mechanism. We fabricated n-type germanium and silicon point-contact transistors by employing modern technologies unavailable to the original researchers. These include photolithography and precision probe manipulators, which allow the precise operation of the contact separation and quality. We also determined the semiconductors’ carrier concentrations with Hall effect measurements. The electrical contacts were prepared in three different configurations: original triangle shape, thin film deposition, and probe manipulation. The transistors were tested with a standard circuit to determine their amplification. Analysis of the amplifications was done and then compared to a commercial bipolar-junction transistor. Our results shed light on understanding the mechanism of point-contact transistors and may advance modern transistor technology.