Low Temperature Thermoelectric Properties of Bi₂₋ₓSbₓTeSe₂ Crystals near the n-p Crossover
Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi2-xSbxTeSe2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.
M. K. Fuccillo et al., "Low Temperature Thermoelectric Properties of Bi₂₋ₓSbₓTeSe₂ Crystals near the n-p Crossover," Solid State Communications, vol. 152, no. 14, pp. 1208 - 1211, Elsevier, Jul 2012.
The definitive version is available at https://doi.org/10.1016/j.ssc.2012.04.062
Keywords and Phrases
Basal Planes; D. Thermoelectric; Electrical Resistances; Electrical Resistivity; Electron Hole; Electronic Transport; Figure Of Merits; Hall Measurements; Low Temperatures; Nano-structuring; P-type; Thermoelectric Properties; Semiconductor Doping; Thermal Conductivity
International Standard Serial Number (ISSN)
Article - Journal
© 2012 Elsevier, All rights reserved.
01 Jul 2012