Low Temperature Thermoelectric Properties of Bi₂₋ₓSbₓTeSe₂ Crystals near the n-p Crossover

Abstract

Seebeck coefficients, electrical resistivities, thermal conductivities and figure of merit ZT of Bi2-xSbxTeSe2 crystals (x=0.8, 0.9, 1.0, 1.1, and 1.2) measured along the hexagonal basal plane are presented. The crystals gradually change from n- to p-type with increasing Sb content, with the crossover lying in the region between x=1.0 and 1.1. The crossover is accounted for by a simple (p-n) electron-hole compensation model, as supported by carrier concentrations determined from Hall measurements. ZT was found to be maximized near the crossover on the p-type side, with the high electrical resistance of the Se-rich crystals apparently the limiting factor in the performance. These materials may serve as a basis for future nanostructuring or doping studies.

Department(s)

Physics

Keywords and Phrases

Basal Planes; D. Thermoelectric; Electrical Resistances; Electrical Resistivity; Electron Hole; Electronic Transport; Figure Of Merits; Hall Measurements; Low Temperatures; Nano-structuring; P-type; Thermoelectric Properties; Semiconductor Doping; Thermal Conductivity

International Standard Serial Number (ISSN)

0038-1098

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2012 Elsevier, All rights reserved.

Publication Date

01 Jul 2012

Link to Full Text

Share

 
COinS