The Low Temperature Thermoelectric Properties of CuₓTiSe2-ySy
The low temperature thermoelectric properties of TiSe2, co-doped with Cu and S, are reported. Partial S substitution for Se changes the magnitude of the indirect bandgap, while the Cu-doping independently controls the n-type carrier concentration. The Seebeck coefficients are negative, in the range of -50 to -200 μV K-1, and the resistivities are 0.1-10 mΩ cm. The thermal conductivity for the sample with the largest thermoelectric power factor was found to be relatively low, 3-4 W m-1 K-1, and decreases with decreasing temperature. The thermoelectric efficiencies for the best materials found in this system, typified by Cu0.02TiSe1.7S0.3, were largest at 0.07 at 300 K and decreased to 0.01 at 75 K.
Y. S. Hor and R. J. Cava, "The Low Temperature Thermoelectric Properties of CuₓTiSe2-ySy," Materials Research Bulletin, vol. 44, no. 6, pp. 1375 - 1378, Elsevier, Jun 2009.
The definitive version is available at https://doi.org/10.1016/j.materresbull.2008.12.006
Keywords and Phrases
Carrier Concentration; Charge Density; Charge Density Waves; Doping (Additives); Electric Power Factor; Thermal Conductivity; Thermal Insulating Materials; Thermoelectric Equipment; Thermoelectric Power; A. Electronic Materials; A. Layered Compounds; Band Gaps; Co-doped; Cu-doping; D. Charge-density Waves; D. Thermal Conductivity; Low Temperatures; Thermoelectric Efficiencies; Thermoelectric Power Factors; Thermoelectric Properties; Thermoanalysis
International Standard Serial Number (ISSN)
Article - Journal
© 2009 Elsevier, All rights reserved.
01 Jun 2009