The Low Temperature Thermoelectric Properties of CuₓTiSe_2-yS_y

Author

Yew San Hor, Missouri University of Science and TechnologyFollow
Robert Joseph Cava

Abstract

The low temperature thermoelectric properties of TiSe₂, co-doped with Cu and S, are reported. Partial S substitution for Se changes the magnitude of the indirect bandgap, while the Cu-doping independently controls the n-type carrier concentration. The Seebeck coefficients are negative, in the range of -50 to -200 μV K^-1, and the resistivities are 0.1-10 mΩ cm. The thermal conductivity for the sample with the largest thermoelectric power factor was found to be relatively low, 3-4 W m^-1 K^-1, and decreases with decreasing temperature. The thermoelectric efficiencies for the best materials found in this system, typified by Cu_0.02TiSe_1.7S_0.3, were largest at 0.07 at 300 K and decreased to 0.01 at 75 K.

Recommended Citation

Y. S. Hor and R. J. Cava, "The Low Temperature Thermoelectric Properties of CuₓTiSe_2-yS_y," Materials Research Bulletin, vol. 44, no. 6, pp. 1375 - 1378, Elsevier, Jun 2009.

The definitive version is available at https://doi.org/10.1016/j.materresbull.2008.12.006

Department(s)

Physics

Keywords and Phrases

Carrier Concentration; Charge Density; Charge Density Waves; Doping (Additives); Electric Power Factor; Thermal Conductivity; Thermal Insulating Materials; Thermoelectric Equipment; Thermoelectric Power; A. Electronic Materials; A. Layered Compounds; Band Gaps; Co-doped; Cu-doping; D. Charge-density Waves; D. Thermal Conductivity; Low Temperatures; Thermoelectric Efficiencies; Thermoelectric Power Factors; Thermoelectric Properties; Thermoanalysis

International Standard Serial Number (ISSN)

0025-5408

Document Type

Article - Journal

Document Version

Citation

File Type

text

Language(s)

English

Rights

© 2009 Elsevier, All rights reserved.

Publication Date

01 Jun 2009