Chemical-Pressure Tailoring of Low-Field, Room-Temperature Magnetoresistance in (Ca, Sr, Ba)Fe₀.₅Mo₀.₅O₃

Abstract

Chemical pressure effects of low-field intergrain magnetoresistance (IMR) in (Ca,Sr,Ba)Fe0.5M00.5O3 were studied by doping either Ba or Ca into the Sr site (IMR) was found to be highly tunable. The Curie temperature and magnetic softness were changed due to the chemical pressure exerted by the dopant. The room temperature IMR was reported to be 3.5% in 100 Oe at optimal doping.

Department(s)

Physics

Keywords and Phrases

Coercive Force; Colossal Magnetoresistance; Doping (Additives); Magnetic Hysteresis; Magnetic Storage; Metal Insulator Transition; Metallic Superlattices; Perovskite; Phase Diagrams; Quantum Interference Devices; Chemical Pressure; Polycrystalline Materials

International Standard Serial Number (ISSN)

0003-6951

Document Type

Article - Journal

Document Version

Final Version

File Type

text

Language(s)

English

Rights

© 2001 American Institute of Physics (AIP), All rights reserved.

Publication Date

01 Jul 2001

This document is currently not available here.

Share

 
COinS